By Ivan A. Parinov

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The films can be used for technology of forming the hybrid systems of microfluidic structures in the implementation of planar processing by batch methods, microfluidic structures of channels by surface passivation etc. In this study, the experimental results are discussed, and the processing mechanisms and methods for SiO 2 nanostructured films, formed on Si and SiC surfaces are considered. Some technical solutions, based on using the equipment for silicon dioxide nano-structured films, are suggested.

As it was shown in Reference [66], the concentration of excessive carbon at the interface is well lesser than 1015 cm2. Based on the spectral analysis of electron energy loss, it was demonstrated that the concentration of carbon at the interface SiO2/4H-SiC(0001) can be higher than in the oxide or SiC crystal. Carbonrelated defects at the interface SiO2/SiC were confirmed with data from electron paramagnetic resonance while the presence of carbon clusters on the C-face of SiC was detected by means of surface-enhanced Raman scattering [66].

These centers determine the appearance of an impurity band in the forbidden band as well as recommendation levels causing the observed photoluminescence. 7 eV behind of valence band. The width of the photoluminescence spectral band is determined by the presence of several recommendation levels, as well as the oxide microporosity. (2) The other possible explanation concerns the photoluminescence of small quantumdimensional SiC clusters, which can be present in the oxide volume after the electrochemical etching.

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